350 nm process

百度　　凡百工作，首重定名。

The 350 nanometer process (350 nm process) is a level of semiconductor process technology that was reached in the 1995–1996 timeframe by leading semiconductor companies like Intel and IBM.

Examples

SGS-Thomson 5LM^[1]

Products featuring 350 nm manufacturing process

MTI VR4300i (1995), used in the Nintendo 64 game console.
Intel Pentium (P54CS, 1995), Pentium Pro (1995) and initial Pentium II CPUs (Klamath, 1997).
AMD K5 (1996) and original AMD K6 (Model 6, 1997) CPUs.
МЦСТ-R150 (2001).
Parallax Propeller (2006), 8 core microcontroller.^[2]
Atmel ATmega328, used in the Arduino UNO.^[3]^[4]
Nvidia RIVA 128 (1997) GPU

References

^ RIVA 128 gains support as preferred Direct3D developer platform press release, Nvidia, accessed December 3, 2023.
^ "Propeller I semiconductor process technology? Is it 350nm or 180nm?". Parallax Forums. Archived from the original on 2025-08-07. Retrieved 2025-08-07.
^ Petryk, Dmytro; Dyka, Zoya (2018). "Optical Fault Injections: a Setup Comparison". S2CID 198917285. {{cite journal}}: Cite journal requires |journal= (help)
^ Guillen, Oscar; Gruber, Michael; De Santis, Fabrizio (2017). "Low-Cost Setup for Localized Semi-invasive Optical Fault Injection Attacks: How Low Can We Go?". Constructive Side-Channel Analysis and Secure Design. Lecture Notes in Computer Science. Vol. 10348. pp. 207–222. doi:10.1007/978-3-319-64647-3_13. ISBN 978-3-319-64646-6.

Preceded by 600 nm	CMOS manufacturing processes	Succeeded by 250 nm

This nanotechnology-related article is a stub. You can help Wikipedia by expanding it.

[NVRIVA128D3Dpressrelease-1] RIVA 128 gains support as preferred Direct3D developer platform press release, Nvidia, accessed December 3, 2023.

[2] "Propeller I semiconductor process technology? Is it 350nm or 180nm?". Parallax Forums. Archived from the original on 2025-08-07. Retrieved 2025-08-07.

[3] Petryk, Dmytro; Dyka, Zoya (2018). "Optical Fault Injections: a Setup Comparison". S2CID 198917285. {{cite journal}}: Cite journal requires |journal= (help)

[4] Guillen, Oscar; Gruber, Michael; De Santis, Fabrizio (2017). "Low-Cost Setup for Localized Semi-invasive Optical Fault Injection Attacks: How Low Can We Go?". Constructive Side-Channel Analysis and Secure Design. Lecture Notes in Computer Science. Vol. 10348. pp. 207–222. doi:10.1007/978-3-319-64647-3_13. ISBN 978-3-319-64646-6.

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Semiconductor device fabrication

MOSFET scaling (process nodes)
20 μm – 1968 10 μm – 1971 6 μm – 1974 3 μm – 1977 1.5 μm – 1981 1 μm – 1984 800 nm – 1987 600 nm – 1990 350 nm – 1993 250 nm – 1996 180 nm – 1999 130 nm – 2001 90 nm – 2003 65 nm – 2005 45 nm – 2007 32 nm – 2009 28 nm – 2010 22 nm – 2012 14 nm – 2014 10 nm – 2016 7 nm – 2018 5 nm – 2020 3 nm – 2022
Future 2 nm ~ 2025 1 nm ~ 2027
Half-nodes Density CMOS Device (multi-gate) Moore's law Transistor count Semiconductor Industry Nanoelectronics
v t e